화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond
Ogura M, Kato H, Makino T, Okushi H, Yamasaki S
Journal of Crystal Growth, 317(1), 60, 2011
2 Growth and characterization of boron-doped (111) CVD homoepitaxial diamond films
Ri SG, Kato H, Ogura M, Watanabe H, Makino T, Yamasaki S, Okushi H
Journal of Crystal Growth, 299(2), 235, 2007
3 Hydrogen plasma etching mechanism on (001) diamond
Ri SG, Watanabe H, Ogura M, Takeuchi D, Yamasaki S, Okushi H
Journal of Crystal Growth, 293(2), 311, 2006
4 Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films
Chen YG, Ogura M, Okushi H
Journal of Vacuum Science & Technology B, 22(4), 2084, 2004
5 Single contact-material MESFETs on 4H-SiC
Tanimoto S, Inada M, Kiritani N, Hoshi M, Okushi H, Arai K
Materials Science Forum, 457-460, 1221, 2004
6 Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H-2 ratio
Ri SG, Yoshida H, Yamanaka S, Watanabe H, Takeuchi D, Okushi H
Journal of Crystal Growth, 235(1-4), 300, 2002
7 Device-grade homoepitaxial diamond film growth
Okushi H, Watanabe H, Ri S, Yamanaka S, Takeuchi D
Journal of Crystal Growth, 237, 1269, 2002
8 Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition
Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K
Materials Science Forum, 389-3, 299, 2002
9 Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS)
Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K
Materials Science Forum, 389-3, 847, 2002
10 Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy
Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K
Materials Science Forum, 389-3, 851, 2002