검색결과 : 27건
No. | Article |
---|---|
1 |
Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond Ogura M, Kato H, Makino T, Okushi H, Yamasaki S Journal of Crystal Growth, 317(1), 60, 2011 |
2 |
Growth and characterization of boron-doped (111) CVD homoepitaxial diamond films Ri SG, Kato H, Ogura M, Watanabe H, Makino T, Yamasaki S, Okushi H Journal of Crystal Growth, 299(2), 235, 2007 |
3 |
Hydrogen plasma etching mechanism on (001) diamond Ri SG, Watanabe H, Ogura M, Takeuchi D, Yamasaki S, Okushi H Journal of Crystal Growth, 293(2), 311, 2006 |
4 |
Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films Chen YG, Ogura M, Okushi H Journal of Vacuum Science & Technology B, 22(4), 2084, 2004 |
5 |
Single contact-material MESFETs on 4H-SiC Tanimoto S, Inada M, Kiritani N, Hoshi M, Okushi H, Arai K Materials Science Forum, 457-460, 1221, 2004 |
6 |
Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H-2 ratio Ri SG, Yoshida H, Yamanaka S, Watanabe H, Takeuchi D, Okushi H Journal of Crystal Growth, 235(1-4), 300, 2002 |
7 |
Device-grade homoepitaxial diamond film growth Okushi H, Watanabe H, Ri S, Yamanaka S, Takeuchi D Journal of Crystal Growth, 237, 1269, 2002 |
8 |
Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K Materials Science Forum, 389-3, 299, 2002 |
9 |
Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS) Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 847, 2002 |
10 |
Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 851, 2002 |