검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Replacement fin processing for III-V on Si: From FinFets to nanowires Waldron N, Merckling C, Teugels L, Ong P, Sebaai F, Barla K, Collaert N, Thean VY Solid-State Electronics, 115, 81, 2016 |
| 2 |
Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces Matovu JB, Ong P, Leunissen LHA, Krishnan S, Babu SV Industrial & Engineering Chemistry Research, 52(31), 10664, 2013 |
| 3 |
Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2 Peddeti S, Ong P, Leunissen LHA, Babu SV Electrochemical and Solid State Letters, 14(7), H254, 2011 |
| 4 |
Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70-85% Ge Loo R, Souriau L, Ong P, Kenis K, Rip J, Storck P, Buschhardt T, Vorderwestner M Journal of Crystal Growth, 324(1), 15, 2011 |
| 5 |
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM Thin Solid Films, 518(9), 2538, 2010 |