검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Kambayashi H, Satoh Y, Ootomo S, Kokawa T, Nomura T, Kato S, Chow TSP Solid-State Electronics, 54(6), 660, 2010 |
| 2 |
Micro-area analysis in SIMS depth profiling by mesa-structure preparation Seki S, Tamura H, Wada Y, Tsutsui K, Ootomo S Applied Surface Science, 255(4), 1373, 2008 |
| 3 |
250 degrees C operation normally-off GaN MOSFETs Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Yoshida S Solid-State Electronics, 51(5), 784, 2007 |
| 4 |
SIMS analysis of a multiple quantum well structure in a vertical cavity surface emitting laser using the mixing-roughness-information depth model Ootomo S, Maruya H, Seo S, Iwase F Applied Surface Science, 252(19), 7275, 2006 |
| 5 |
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors Hashizume T, Ootomo S, Inagaki T, Hasegawa H Journal of Vacuum Science & Technology B, 21(4), 1828, 2003 |
| 6 |
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors Hasegawa H, Inagaki T, Ootomo S, Hashizume T Journal of Vacuum Science & Technology B, 21(4), 1844, 2003 |
| 7 |
Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures Hashizume T, Ootomo S, Oyama S, Konishi M, Hasegawa H Journal of Vacuum Science & Technology B, 19(4), 1675, 2001 |
| 8 |
Surface passivation of GaAs by ultra-thin cubic GaN layer Anantathanasarn S, Ootomo S, Hashizume T, Hasegawa H Applied Surface Science, 159, 456, 2000 |