화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Molecular-Beam Epitaxy Growth-Kinetics for Group-III Nitrides
Foxon CT, Cheng TS, Hooper SE, Jenkins LC, Orton JW, Lacklison DE, Novikov SV, Popova TB, Tretyakov VV
Journal of Vacuum Science & Technology B, 14(3), 2346, 1996
2 Electrical Characterization of Single Barrier GaAs/GaN/GaAs Heterostructures
Huang X, Cheng TS, Hooper SE, Foster TJ, Jenkins LC, Wang J, Foxon CT, Orton JW, Eaves L, Main PC
Journal of Vacuum Science & Technology B, 13(4), 1582, 1995
3 Auger-Electron Spectroscopy, X-Ray-Diffraction, and Scanning Electron-Microscopy of Inn, GaN, and Ga(Asn) Films on Gap and GaAs(001) Substrates
Jenkins LC, Cheng TS, Foxon CT, Hooper SE, Orton JW, Novikov SV, Tretyakov VV
Journal of Vacuum Science & Technology B, 13(4), 1585, 1995
4 External Photoluminescence Efficiency and Minority-Carrier Lifetime of (Al,Ga)as/GaAs Multi-Quantum-Well Samples Grown by Molecular-Beam Epitaxy Using Both As2 and As4
Foxon CT, Cheng TS, Dawson P, Lacklison DE, Orton JW, Vandervleuten W, Hughes OH, Henini M
Journal of Vacuum Science & Technology B, 12(2), 1026, 1994