검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 mu m grown by MOVPE on InP substrate Grasse C, Mueller M, Gruendl T, Boehm G, Roenneberg E, Wiecha P, Rosskopf J, Ortsiefer M, Meyer R, Amann MC Journal of Crystal Growth, 370, 217, 2013 |
| 2 |
Comparison of InP- and GaSb-based VCSELs emitting at 2.3 mu m suitable for carbon monoxide detection Boehm G, Bachmann A, Rosskopf J, Ortsiefer M, Chen J, Hangauer A, Meyer R, Strzoda R, Amann MC Journal of Crystal Growth, 323(1), 442, 2011 |
| 3 |
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 mu m Boehm G, Grau M, Dier O, Windhorn K, Roenneberg E, Rosskopf J, Shau R, Meyer R, Ortsiefer M, Amann MC Journal of Crystal Growth, 301, 941, 2007 |
| 4 |
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 mu m Boehm G, Ortsiefer M, Shau R, Rosskopf J, Lauer C, Maute M, Kohler F, Mederer F, Meyer R, Amann MC Journal of Crystal Growth, 251(1-4), 748, 2003 |
| 5 |
AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers Boehm G, Ortsiefer M, Shau R, Koehler F, Meyer R, Amann MC Journal of Crystal Growth, 227, 319, 2001 |