검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Grill A, Stampfer B, Im KS, Lee JH, Ostermaier C, Ceric H, Waltl M, Grasser T Solid-State Electronics, 156, 41, 2019 |
| 2 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G Solid-State Electronics, 125, 118, 2016 |
| 3 |
Characterization of charge trapping phenomena at III-N/dielectric interfaces Stradiotto R, Pobegen G, Ostermaier C, Grasser T Solid-State Electronics, 125, 142, 2016 |
| 4 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |