검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells Lee SN, Paek HS, Kim H, Kim KK, Cho YH, Jang T, Park Y Journal of Crystal Growth, 310(16), 3881, 2008 |
| 2 |
Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire Lee SN, Paek HS, Ryu HY, Son JK, Sakong T, Jang T, Choi KK, Sung YJ, Kim YH, Kim HK, Chae SH, Ha KH, Chae JH, Kim KS, Kwak JS, Nam OH, Park Y Journal of Crystal Growth, 298, 695, 2007 |
| 3 |
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire Lee SN, Paek HS, Son JK, Sakong T, Nam OH, Park Y Journal of Crystal Growth, 307(2), 358, 2007 |
| 4 |
Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode Lee SN, Jang T, Son JK, Paek HS, Sakong T, Yoon E, Nam OH, Park Y Journal of Crystal Growth, 287(2), 554, 2006 |
| 5 |
Enhanced optical properties of InGaN MQWs with InGaN underlying layers Son JK, Lee SN, Sakong T, Paek HS, Nam O, Park Y, Hwang JS, Kim JY, Cho YH Journal of Crystal Growth, 287(2), 558, 2006 |
| 6 |
AIN과 저온 GaN 완충층을 이용한 Si 기판상의 후막 GaN 성장에 관한 연구 백호선, 이정욱, 김하진, 유지범 Korean Journal of Materials Research, 9(6), 599, 1999 |