검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Essa Z, Pelletier B, Morin P, Boulenc P, Pakfar A, Tavernier C, Wacquant F, Zechner C, Juhel M, Autran JL, Cristiano F Solid-State Electronics, 126, 163, 2016 |
| 2 |
Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium Fazzini PF, Cristiano F, Talbot E, Ben Assayag G, Paul S, Lerch W, Pakfar A, Hartmann JM Thin Solid Films, 518(9), 2338, 2010 |
| 3 |
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E Thin Solid Films, 518(9), 2427, 2010 |
| 4 |
Overlayer stress effects on defect formation in Si and Ge Cowern NEB, Bennett NS, Ahn C, Yoon JC, Hamm S, Lerch W, Kheyrandish H, Cristiano F, Pakfar A Thin Solid Films, 518(9), 2442, 2010 |