화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Oxalic-acid-based slurries with tunable selectivity for copper and tantalum removal in CMP
Janjam SVSB, Surisetty CVVS, Pandija S, Roy D, Babu SV
Electrochemical and Solid State Letters, 11(3), H66, 2008
2 Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent
Klug BK, Pettit CM, Pandija S, Babu SV, Roy D
Journal of Applied Electrochemistry, 38(10), 1347, 2008
3 Chemical mechanical planarization of copper using abrasive-free solutions of oxalic acid and hydrogen peroxide
Pandija S, Roy D, Babu SV
Materials Chemistry and Physics, 102(2-3), 144, 2007
4 Oxalic acid as a complexing agent in CMP slurries for copper
Gorantla VRK, Babel A, Pandija S, Babua SV
Electrochemical and Solid State Letters, 8(5), G131, 2005