화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Impact of metal etch residues on etch species density and uniformity
Dictus D, Shamiryan D, Paraschiv V, Boullart W, De Gendt S, Vinckier C
Journal of Vacuum Science & Technology B, 28(4), 789, 2010
2 SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS
Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V
Chemical Engineering Communications, 196(12), 1475, 2009
3 Sulfonic acid-functionalized gold nanoparticles: A colloid-bound catalyst for soft lithographic application on self-assembled monolayers (vol 125, pg 4279, 2003)
Li XM, Paraschiv V, Huskens J, Reinhoudt DN
Journal of the American Chemical Society, 130(16), 5606, 2008
4 Using ellipsometry for assessment of TiN surface roughness after plasma etch
Shamiryan D, Paraschiv V, Dictus D, Baklanov MR, Beckx S, Boullart W
Journal of the Electrochemical Society, 155(2), H108, 2008
5 Profile control of novel non-Si gates using BCl3/N-2 plasma
Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W
Journal of Vacuum Science & Technology B, 25(3), 739, 2007
6 Influence of TaN gate electrode microstructure on its dry etch properties
Shamiryan D, Paraschiv V, Tokei Z, Beckx S, Boullart W
Electrochemical and Solid State Letters, 9(8), G272, 2006
7 Wet etch characteristics of hafnium silicate layers
Claes M, Paraschiv V, Dictus D, Conard T, Delabie A, Van Elshocht S, Zhao C, Everaert JL, Boullart W, Vanhaelemeersch S, De Gendt S
Journal of the Electrochemical Society, 153(4), F60, 2006
8 Influence of crystallographic orientation on dry etch properties of TiN
Dictus D, Shamiryan D, Paraschiv V, Boullart W, De Gendt S, Vanhaelemeersch S
Journal of Vacuum Science & Technology B, 24(5), 2472, 2006
9 Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors
Goux L, Xu Z, Paraschiv V, Lisoni JG, Maes D, Haspeslagh L, Groeseneken G, Wouters DJ
Solid-State Electronics, 50(7-8), 1227, 2006
10 Influence of dry-etch patterning of top electrode and SrBi2Ta2O9 on the properties of ferroelectric capacitors
Goux L, Paraschiv V, Lisoni JG, Schwitters M, Maes D, Haspeslagh L, Wouters DJ, Casella P, Zambrano R
Journal of the Electrochemical Society, 152(12), C865, 2005