검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si Dinh DV, Parbrook PJ Journal of Crystal Growth, 501, 34, 2018 |
| 2 |
Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy Dinh DV, Alam SN, Parbrook PJ Journal of Crystal Growth, 435, 12, 2016 |
| 3 |
Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55) Dinh DV, Pampili P, Parbrook PJ Journal of Crystal Growth, 451, 181, 2016 |
| 4 |
Single phase (11(2)over-bar2) AIN grown on (10(1)over-bar0) sapphire by metalorganic vapour phase epitaxy Dinh DV, Conroy M, Zubialevich VZ, Petkov N, Holmes JD, Parbrook PJ Journal of Crystal Growth, 414, 94, 2015 |
| 5 |
Structural and optical properties of Ga auto-incorporated InAlN epilayers Taylor E, Smith MD, Sadler TC, Lorenz K, Li HN, Alves E, Parbrook PJ, Martin RW Journal of Crystal Growth, 408, 97, 2014 |
| 6 |
AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers Li HN, Sadler TC, Parbrook PJ Journal of Crystal Growth, 383, 72, 2013 |
| 7 |
Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes Lee KB, Parbrook PJ, Wang T, Bai J, Ranalli F, Airey RJ, Hill G Journal of Crystal Growth, 311(10), 2857, 2009 |
| 8 |
InGaN/GaN quantum wells with low growth temperature GaN cap layers Pendlebury ST, Parbrook PJ, Mowbray DJ, Wood DA, Lee KB Journal of Crystal Growth, 307(2), 363, 2007 |
| 9 |
V-shaped pits formed at the GaN/AlN interface Bai J, Wang T, Parbrook PJ, Ross IM, Cullis AG Journal of Crystal Growth, 289(1), 63, 2006 |
| 10 |
A study of dislocations in AIN and GaN films grown on sapphire substrates Bai J, Wang T, Parbrook PJ, Lee KB, Cullis AG Journal of Crystal Growth, 282(3-4), 290, 2005 |