검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices Mochizuki S, Loesing R, Zhu ZM, Domenicucci AG, Flaitz PL, Li JH, Paruchuri V Thin Solid Films, 557, 94, 2014 |
| 2 |
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices Loubet N, Adam T, Raymond M, Liu Q, Cheng KG, Sreenivasan R, Reznicek A, Khare P, Kleemeier W, Paruchuri V, Doris B, Sampson R Thin Solid Films, 520(8), 3149, 2012 |
| 3 |
Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films Adam T, Loubet N, Reznicek A, Paruchuri V, Sampson R, Sadana D Thin Solid Films, 520(8), 3155, 2012 |