화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates
Wosko M, Paszkiewicz B, Szymanski T, Paszkiewicz R
Journal of Crystal Growth, 414, 248, 2015
2 Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates
Paszkiewicz R, Paszkiewicz B, Wosko M, Szyszka A, Marciniak L, Prazmowska J, Macherzynski W, Serafinczuk J, Kozlowski J, Tlaczala M, Kovac J, Novotny I, Skriniarova J, Hasko D
Journal of Crystal Growth, 310(23), 4891, 2008
3 Electrical characterisation of structures consisting of Ti-V-Pd thin film oxide on silicon by impedance spectroscopy
Domaradzki J, Nitsch K, Prociow EL, Kaczmarek D, Paszkiewicz B
Solid State Ionics, 176(25-28), 2177, 2005
4 Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R, Szydlowski M
Applied Surface Science, 235(3), 389, 2004
5 Characterization of the interface and the bulk phenomena in metal-SiO2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R
Thin Solid Films, 467(1-2), 190, 2004
6 Influence of crystallographic structure on electrical characteristics of (Al, Ga)N epitaxial layers grown by MOVPE method
Paszkiewicz R, Paszkiewicz B, Kozlowski J, Piasecki M, Kosnikowski W, Tlaczala M
Journal of Crystal Growth, 248, 487, 2003
7 Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R
Thin Solid Films, 444(1-2), 208, 2003
8 MOVPE technology and characterisation of silicon delta-doped GaAs and AlxGa1-xAs
Sciana B, Radziewicz D, Paszkiewicz B, Tlaczala M, Utko M, Sitarek P, Sek G, Misiewicz J, Kinder R, Kovac J, Srnanek R
Thin Solid Films, 412(1-2), 55, 2002
9 Impedance spectroscopy analysis of AlGaN/GaN HFET structures
Paszkiewicz B
Journal of Crystal Growth, 230(3-4), 590, 2001