검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Self-organization of palladium nanoislands on GaN and AlxGa1-xN/GaN heterostructures Stafiniak A, Szymanski T, Paszkiewicz R Applied Surface Science, 426, 123, 2017 |
| 2 |
Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates Wosko M, Paszkiewicz B, Szymanski T, Paszkiewicz R Journal of Crystal Growth, 414, 248, 2015 |
| 3 |
GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers Podhorodecki A, Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Serafinczuk J, Strek W Journal of Crystal Growth, 310(5), 940, 2008 |
| 4 |
Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates Paszkiewicz R, Paszkiewicz B, Wosko M, Szyszka A, Marciniak L, Prazmowska J, Macherzynski W, Serafinczuk J, Kozlowski J, Tlaczala M, Kovac J, Novotny I, Skriniarova J, Hasko D Journal of Crystal Growth, 310(23), 4891, 2008 |
| 5 |
Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Kozlowski J, Serafinczuk J, Strek W Journal of Crystal Growth, 277(1-4), 149, 2005 |
| 6 |
Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R, Szydlowski M Applied Surface Science, 235(3), 389, 2004 |
| 7 |
Synthesis and properties of UV-curable poly(imideurethane) acrylates Meledyn M, Paszkiewicz R, Masiulanis B Journal of Applied Polymer Science, 91(2), 971, 2004 |
| 8 |
Characterization of the interface and the bulk phenomena in metal-SiO2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R Thin Solid Films, 467(1-2), 190, 2004 |
| 9 |
Influence of crystallographic structure on electrical characteristics of (Al, Ga)N epitaxial layers grown by MOVPE method Paszkiewicz R, Paszkiewicz B, Kozlowski J, Piasecki M, Kosnikowski W, Tlaczala M Journal of Crystal Growth, 248, 487, 2003 |
| 10 |
Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R Thin Solid Films, 444(1-2), 208, 2003 |