| 1 |
Room temperature analysis of Ge p(+)/n diodes reverse characteristics fabricated by platinum assisted dopant activation
Ioannou-Sougleridis V, Poulakis N, Dimitrakis P, Normand P, Patsis GP, Dimoulas A, Simoen E
Solid-State Electronics, 81, 19, 2013 |
| 2 |
Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography
Tsikrikas N, Drygiannakis D, Patsis GP, Raptis I, Gerardino A, Stavroulakis S, Voyiatzis E
Journal of Vacuum Science & Technology B, 25(6), 2307, 2007 |
| 3 |
Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator
Patsis GP, Gogolides E
Journal of Vacuum Science & Technology B, 23(4), 1371, 2005 |
| 4 |
Stochastic simulation of thin photoresist film dissolution: a dynamic and a quasi-static dissolution algorithm for the simulation of surface and line-edge roughness formation
Patsis GP
Polymer, 46(7), 2404, 2005 |
| 5 |
Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions
Constantoudis V, Patsis GP, Leunissen LHA, Gogolides E
Journal of Vacuum Science & Technology B, 22(4), 1974, 2004 |
| 6 |
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
Tserepi A, Cordoyiannis G, Patsis GP, Constantoudis V, Gogolides E, Valamontes ES, Eon D, Peignon MC, Cartry G, Cardinaud C, Turban G
Journal of Vacuum Science & Technology B, 21(1), 174, 2003 |
| 7 |
Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists
Patsis GP, Glezos N, Gogolides E
Journal of Vacuum Science & Technology B, 21(1), 254, 2003 |
| 8 |
Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images
Patsis GP, Constantoudis V, Tserepi A, Gogolides E, Grozev G
Journal of Vacuum Science & Technology B, 21(3), 1008, 2003 |
| 9 |
Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
Constantoudis V, Patsis GP, Tserepi A, Gogolides E
Journal of Vacuum Science & Technology B, 21(3), 1019, 2003 |
| 10 |
Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography
Patsis GP, Glezos N
Journal of Vacuum Science & Technology B, 20(4), 1303, 2002 |
