| 1 |
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
Lee WJ, Park MS, Lee WJ, Choi YJ, Lee HY
Journal of Crystal Growth, 493, 8, 2018 |
| 2 |
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
Zhang YH, Wei TB, Wang JX, Fan C, Chen Y, Hu Q, Li JM
Journal of Crystal Growth, 394, 7, 2014 |
| 3 |
Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy
Tao YB, Yu TJ, Yang ZY, Ling D, Wang Y, Chen ZZ, Yang ZJ, Zhang GY
Journal of Crystal Growth, 315(1), 183, 2011 |
| 4 |
Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates
Su YK, Chen JJ, Lin CL, Chen SM, Li WL, Kao CC
Journal of Crystal Growth, 311(10), 2973, 2009 |
| 5 |
Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate
Shin HY, Kwon SK, Chang YI, Cho MJ, Park KH
Journal of Crystal Growth, 311(17), 4167, 2009 |
