검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(1), C1H5, 2010 |
| 2 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (vol 28, pg C1H5, 2010) Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(3), 648, 2010 |
| 3 |
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Ferain I, Duffy R, Collaert N, van Dal MJH, Pawlak BJ, O'Sullivan B, Witters L, Rooyackers R, Conard T, Popovici M, van Elshocht S, Kaiser M, Weemaes RGR, Swerts J, Jurczak M, Lander RJP, De Meyer K Solid-State Electronics, 53(7), 760, 2009 |
| 4 |
Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing Felch SB, Collart E, Parihar V, Thirupapuliyur S, Schreutelkamp R, Pawlak BJ, Hoffmann T, Severi S, Eyben P, Vandervorst W, Noda T Journal of Vacuum Science & Technology B, 26(1), 281, 2008 |
| 5 |
Probing doping conformality in fin shaped field effect transistor structures using resistors Vandervorst W, Jurczak M, Everaert JL, Pawlak BJ, Duffy R, Del-Agua-Bomiquel JI, Poon T Journal of Vacuum Science & Technology B, 26(1), 396, 2008 |
| 6 |
Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Duffy R, Curatola G, Pawlak BJ, Doornbos G, van der Tak K, Breimer P, van Berkum JGM, Roozeboom F Journal of Vacuum Science & Technology B, 26(1), 402, 2008 |
| 7 |
Multi-gate devices for the 32 nm technology node and beyond Collaert N, De Keersgieter A, Dixit A, Ferain I, Lai LS, Lenoble D, Mercha A, Nackaerts A, Pawlak BJ, Rooyackers R, Schulz T, San KT, Son NJ, Van Dal MJH, Verheyen P, von Arnim K, Witters L, Meyer KD, Biesemans S, Jurczak M Solid-State Electronics, 52(9), 1291, 2008 |
| 8 |
Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing Augendre E, Pawlak BJ, Kubicek S, Hoffmann T, Chiarella T, Kerner C, Severi S, Falepin A, Ramos J, De Keersgieter A, Eyben P, Vanhaeren D, Vandervorst W, Jurczak M, Absil P, Biesemans S Solid-State Electronics, 51(11-12), 1432, 2007 |
| 9 |
Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals Camillo-Castillo RA, Law ME, Jones KS, Lindsay R, Maex K, Pawlak BJ, McCoy S Journal of Vacuum Science & Technology B, 24(1), 450, 2006 |
| 10 |
Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W Journal of Vacuum Science & Technology B, 24(1), 507, 2006 |