화학공학소재연구정보센터
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No. Article
1 Graphene oxide films for field effect surface passivation of silicon for solar cells
Vaqueiro-Contrerasa M, Bartlam C, Bonilla RS, Markevich VP, Halsall MP, Vijayaraghavan A, Peaker AR
Solar Energy Materials and Solar Cells, 187, 189, 2018
2 Breakdown and degradation of ultrathin Hf-based (HfO2)(x)(SiO2)(1-x) gate oxide films
Uppal HJ, Mitrovic IZ, Hall S, Hamilton B, Markevich V, Peaker AR
Journal of Vacuum Science & Technology B, 27(1), 443, 2009
3 Implantation defects and n-type doping in Ge and Ge rich SiGe
Peaker AR, Markevich VP, Hamilton B, Hawkins ID, Slotte J, Kuitunen K, Tuomisto F, Satta A, Simoen E, Abrosimov NV
Thin Solid Films, 517(1), 152, 2008
4 Reliability degradation of thin HfO(2)/SiO(2) gate stacks by remote RF hydrogen and deuterium plasma treatment
Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR
Thin Solid Films, 517(1), 207, 2008
5 Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys
Markevich VP, Dobaczewski L, Nielsen KB, Litvinov VV, Petukh AN, Pokotilo YM, Abrosimov NV, Peaker AR
Thin Solid Films, 517(1), 419, 2008
6 Incorporation and optical activation of erbium in strained silicon-germanium structures
Huda MQ, Peaker AR
Solid-State Electronics, 45(11), 1927, 2001
7 Luminescence from erbium implanted silicon-germanium quantum wells
Huda MQ, Evans-Freeman JH, Peaker AR, Houghton DC, Nejim A
Journal of Vacuum Science & Technology B, 16(6), 2928, 1998