검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching Gaboriau F, Fernandez-Peignon MC, Cartry G, Cardinaud C Journal of Vacuum Science & Technology A, 23(2), 226, 2005 |
| 2 |
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane Tserepi A, Cordoyiannis G, Patsis GP, Constantoudis V, Gogolides E, Valamontes ES, Eon D, Peignon MC, Cartry G, Cardinaud C, Turban G Journal of Vacuum Science & Technology B, 21(1), 174, 2003 |
| 3 |
Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2 Gaboriau F, Peignon MC, Cartry G, Rolland L, Eon D, Cardinaud C, Turban G Journal of Vacuum Science & Technology A, 20(3), 919, 2002 |
| 4 |
Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H-2 and influence of the residence time Gaboriau F, Cartry G, Peignon MC, Cardinaud C Journal of Vacuum Science & Technology B, 20(4), 1514, 2002 |
| 5 |
Plasma etching: principles, mechanisms, application to micro- and nano-technologies Cardinaud C, Peignon MC, Tessier PY Applied Surface Science, 164, 72, 2000 |
| 6 |
Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis Rolland L, Vallee C, Peignon MC, Cardinaud C Applied Surface Science, 164, 147, 2000 |
| 7 |
Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method Hong JG, Granier A, Leteinturier C, Peignon MC, Turban G Journal of Vacuum Science & Technology A, 18(2), 497, 2000 |
| 8 |
New polymer materials for nanoimprinting Schulz H, Scheer HC, Hoffmann T, Torres CMS, Pfeiffer K, Bleidiessel G, Grutzner G, Cardinaud C, Gaboriau F, Peignon MC, Ahopelto J, Heidari B Journal of Vacuum Science & Technology B, 18(4), 1861, 2000 |
| 9 |
Aspect Ratio Effects in Submicron Contact Hole Plasma-Etching Investigated by Quantitative X-Ray Photoelectron-Spectroscopy Legoff C, Peignon MC, Turban G, Bilhant R Journal of Vacuum Science & Technology A, 15(3), 579, 1997 |
| 10 |
Contact Etching Process Characterization by Using Angular X-Ray Photoelectron-Spectroscopy Technique Peignon MC, Clenet F, Turban G Journal of the Electrochemical Society, 143(4), 1347, 1996 |