검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP Solid-State Electronics, 46(3), 379, 2002 |
| 2 |
Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOIN-MOSFETs Haendler S, Dieudonne F, Jomaah J, Balestra F, Raynaud C, Pelloie JL Solid-State Electronics, 46(7), 1013, 2002 |
| 3 |
Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI Faynot O, Poiroux T, Pelloie JL Solid-State Electronics, 45(4), 599, 2001 |