화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(In1-xGax) Se-2 solar cells
Briot O, Moret M, Barbier C, Tiberj A, Peyre H, Sagna A, Contreras S
Solar Energy Materials and Solar Cells, 174, 418, 2018
2 Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism
Lorenzzi J, Zoulis G, Marinova M, Kim-Hak O, Sun JW, Jegenyes N, Peyre H, Cauwet F, Chaudouet P, Soueidan M, Carole D, Camassel J, Polychroniadis EK, Ferro G
Journal of Crystal Growth, 312(23), 3443, 2010
3 Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
Zielinski M, Portail M, Chassagne T, Juillaguet S, Peyre H
Journal of Crystal Growth, 310(13), 3174, 2008
4 Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"
Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S
Materials Science Forum, 457-460, 273, 2004
5 Visible light laser irradiation: A tool for implantation damage reduction
Camassel J, Peyre H, Brink DJ, Zielinski M, Blanque S, Mestres N, Godignon P
Materials Science Forum, 457-460, 941, 2004
6 Improved SiCOI structures elaborated by heteroepitaxy of 3C-SiC on SOI
Chassagne T, Ferro G, Wang H, Stoemenos Y, Peyre H, Contreras S, Camassel J, Monteil Y, Ghyselen B
Materials Science Forum, 389-3, 343, 2002
7 From transport measurements to infrared reflectance spectra of n-type doped 4H-SiC layer stacks
Pernot J, Camassel J, Peyre H, Contreras S, Robert JL
Materials Science Forum, 433-4, 403, 2002