화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Measurements of thermophysical properties of solid and liquid NIST SRM 316L stainless steel
Pichler P, Simonds BJ, Sowards JW, Pottlacher G
Journal of Materials Science, 55(9), 4081, 2020
2 A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf FA, Martinez-Limia A, Pichler P
Solid-State Electronics, 87, 4, 2013
3 Clusters of iron-rich cells in the upper beak of pigeons are macrophages not magnetosensitive neurons
Treiber CD, Salzer MC, Riegler J, Edelman N, Sugar C, Breuss M, Pichler P, Cadiou H, Saunders M, Lythgoe M, Shaw J, Keays DA
Nature, 484(7394), 367, 2012
4 On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen C, Burenkov A, Pichler P, Lorenz J
Solid-State Electronics, 65-66, 114, 2011
5 Honeycomb voids due to ion implantation in germanium
Kaiser RJ, Koffel S, Pichler P, Bauer AJ, Amon B, Claverie A, Benassayag G, Scheiblin P, Frey L, Ryssel H
Thin Solid Films, 518(9), 2323, 2010
6 Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo M, Duguay S, Pichler P, Daoud K, Pareige P
Thin Solid Films, 518(9), 2402, 2010
7 Future challenges in CMOS process modeling
Pichler P, Burenkov A, Lorenz J, Kampen C, Frey L
Thin Solid Films, 518(9), 2478, 2010
8 On a computationally efficient approach to boron-interstitial clustering
Schermer J, Martinez-Limia A, Pichler P, Zechner C, Lerch W, Paul S
Solid-State Electronics, 52(9), 1424, 2008
9 Effect of oxygen on the diffusion of nitrogen implanted in silicon
Mannino G, Privitera V, Scalese S, Libertino S, Napolitani E, Pichler P, Cowern NEB
Electrochemical and Solid State Letters, 7(8), G161, 2004