화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition
Pinnington T, Koleske DD, Zahler JM, Ladous C, Park YB, Crawford MH, Banas M, Thaler G, Russell MJ, Olson SM, Atwater HA
Journal of Crystal Growth, 310(10), 2514, 2008
2 Selective area etching of InP with CBr4 in MOVPE
Ebert C, Levkoff J, Roberts J, Seiler J, Wanamaker C, Pinnington T
Journal of Crystal Growth, 298, 94, 2007
3 Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
Watkins SP, Pinnington T, Hu J, Yeo P, Kluth M, Mason NJ, Nicholas RJ, Walker PJ
Journal of Crystal Growth, 221, 166, 2000
4 Smoothing of textured GaAs surfaces during molecular beam epitaxy growth
Adamcyk M, Ballestad A, Pinnington T, Tiedje T, Davies M, Feng Y
Journal of Vacuum Science & Technology B, 18(3), 1488, 2000
5 Coherent soft x-ray scattering from InP islands on a semiconductor substrate
Adamcyk M, Nicoll C, Pinnington T, Tiedje T, Eisebitt S, Karl A, Scherer R, Eberhardt W
Journal of Vacuum Science & Technology B, 17(4), 1728, 1999
6 Effect of Growth-Conditions on Surface Roughening of Relaxed InGaAs on GaAs
Pinnington T, Lavoie C, Tiedje T
Journal of Vacuum Science & Technology B, 15(4), 1265, 1997