화학공학소재연구정보센터
검색결과 : 22건
No. Article
1 Light emission from silicon nanocrystals: Probing a single quantum dot
Sychugov I, Juhasz R, Valenta J, Zhang A, Pirouz P, Linnros J
Applied Surface Science, 252(15), 5249, 2006
2 Investigation of stacking fault formation in hydrogen bombarded 4H-SiC
Galeckas A, Nielsen HK, Linnros J, Hallen A, Svensson BG, Pirouz P
Materials Science Forum, 483, 327, 2005
3 TEM of dislocations in forward-biased 4H-SiC PiN diodes
Zhang M, Lendenmann H, Pirouz P
Materials Science Forum, 457-460, 359, 2004
4 Deformation of 4H-SiC single crystals oriented for prism slip
Zhang M, Hobgood HM, Pirouz P
Materials Science Forum, 457-460, 371, 2004
5 Residual stresses and stacking faults in n-type 4H-SiC epilayers
Okojie RS, Zhang M, Pirouz P
Materials Science Forum, 457-460, 529, 2004
6 SiC studied via LEEN and cathodoluminescence spectroscopy
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P
Materials Science Forum, 457-460, 543, 2004
7 Generation of stacking faults in highly doped n-type 4H-SiC substrates
Zhang M, Hobgood HM, Treu M, Pirouz P
Materials Science Forum, 457-460, 759, 2004
8 Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC
Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P
Journal of Vacuum Science & Technology B, 20(2), 554, 2002
9 4H-to 3C-SiC polytypic transformation during oxidation
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ
Materials Science Forum, 389-3, 451, 2002
10 Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor
Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T
Materials Science Forum, 389-3, 589, 2002