검색결과 : 22건
No. | Article |
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1 |
Light emission from silicon nanocrystals: Probing a single quantum dot Sychugov I, Juhasz R, Valenta J, Zhang A, Pirouz P, Linnros J Applied Surface Science, 252(15), 5249, 2006 |
2 |
Investigation of stacking fault formation in hydrogen bombarded 4H-SiC Galeckas A, Nielsen HK, Linnros J, Hallen A, Svensson BG, Pirouz P Materials Science Forum, 483, 327, 2005 |
3 |
TEM of dislocations in forward-biased 4H-SiC PiN diodes Zhang M, Lendenmann H, Pirouz P Materials Science Forum, 457-460, 359, 2004 |
4 |
Deformation of 4H-SiC single crystals oriented for prism slip Zhang M, Hobgood HM, Pirouz P Materials Science Forum, 457-460, 371, 2004 |
5 |
Residual stresses and stacking faults in n-type 4H-SiC epilayers Okojie RS, Zhang M, Pirouz P Materials Science Forum, 457-460, 529, 2004 |
6 |
SiC studied via LEEN and cathodoluminescence spectroscopy Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P Materials Science Forum, 457-460, 543, 2004 |
7 |
Generation of stacking faults in highly doped n-type 4H-SiC substrates Zhang M, Hobgood HM, Treu M, Pirouz P Materials Science Forum, 457-460, 759, 2004 |
8 |
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P Journal of Vacuum Science & Technology B, 20(2), 554, 2002 |
9 |
4H-to 3C-SiC polytypic transformation during oxidation Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ Materials Science Forum, 389-3, 451, 2002 |
10 |
Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T Materials Science Forum, 389-3, 589, 2002 |