검색결과 : 11건
No. | Article |
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1 |
Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor Chang J, Choi S, Lee KJ, Bac SK, Choi S, Chongthanaphisut P, Lee S, Liu XY, Dobrowolska M, Furdyna JK Journal of Crystal Growth, 512, 112, 2019 |
2 |
Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer Lee S, Lee KJ, Choi S, Bac SK, Chang J, Choi S, Chongthanaphisut P, Lee S, Liu XY, Dobrowolska M, Furdyna JK Journal of Crystal Growth, 512, 176, 2019 |
3 |
Planar Nernst and Hall effect in patterned ultrathin film of La0.7Sr0.3MnO3 Sharma H, Bana H, Tulapurkar A, Tomy CV Materials Chemistry and Physics, 180, 390, 2016 |
4 |
The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments Zhao ZD, Li MH, Kang P, Zhao CJ, Zhang JY, Zhou LJ, Zhao YC, Jiang SL, Yu GH Applied Surface Science, 332, 710, 2015 |
5 |
Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures Cho S, Park BG Current Applied Physics, 15(8), 902, 2015 |
6 |
Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration Byeon H, Lee S, Yoo T, Lee S, Liu X, Furdyna JK Current Applied Physics, 14, S34, 2014 |
7 |
Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor Jeong Y, Lee H, Lee S, Yoo T, Lee S, Liu X, Furdyna JK Current Applied Physics, 14(12), 1775, 2014 |
8 |
Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device Yoo T, Shin D, Kim J, Kim H, Lee S, Liu X, Furdyna JK Current Applied Physics, 9(4), 773, 2009 |
9 |
Planar hall effect of GaMnAs Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE Materials Science Forum, 449-4, 1069, 2004 |
10 |
저온 분자선에피탁시 방법으로 성장시킨 GaMnAs의 planar Hall 효과 김경현, 박종훈, 김병두, 김도진, 김효진, 임영언, 김창수 Korean Journal of Materials Research, 12(3), 195, 2002 |