| 1 |
Dry etching characteristics of Mo and Al2O3 films in O-2/Cl-2/Ar inductively coupled plasmas
Kwon KH, Efremov A, Yun SJ, Chun I, Kim K
Thin Solid Films, 552, 105, 2014 |
| 2 |
Effects of silyl concentration, hydrogen concentration, ion flux, and silyl surface diffusion length on microcrystalline silicon film growth
Wen S, Zhang L, Lu J, Li Y, Du Z
Korean Journal of Chemical Engineering, 25(6), 1539, 2008 |
| 3 |
On the use of global kinetics models for the investigation of energy deposition and chemistry in RF argon-oxygen plasmas working in the torr regime
Morscheidt W, Hassouni K, Bauduin N, Arefi-Khonsari F, Amouroux J
Plasma Chemistry and Plasma Processing, 23(1), 117, 2003 |
| 4 |
Hydromagnetic slip flow of a radiating fluid with Hall current Part II: Fully developed flow with axial temperature and concentration variations
Abbey TM, Mbeledogu IU
International Journal of Energy Research, 22(2), 93, 1998 |
| 5 |
Measurements of Spatial and Temporal Sheath Evolution Inside Tubular Material for Inner Surface Ion-Implantation
Sun M, Yang SZ, Chen XC
Journal of Vacuum Science & Technology A, 14(6), 3071, 1996 |
| 6 |
Charging Effects in Plasma Immersion Ion-Implantation for Microelectronics
Qin S, Bernstein JD, Zhao ZF, Liu W, Chan C, Shao JQ, Denholm S
Journal of Vacuum Science & Technology B, 13(5), 1994, 1995 |
| 7 |
Monte-Carlo Simulation and Measurement of Silicon Reactive Ion Etching Profiles
Tait RN, Dew SK, Smy T, Brett MJ
Journal of Vacuum Science & Technology A, 12(4), 1085, 1994 |
