검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy Corrion A, Wu F, Mates T, Gallinat CS, Poblenz C, Speck JS Journal of Crystal Growth, 289(2), 587, 2006 |
| 2 |
Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy Poblenz C, Waltereit P, Speck JS Journal of Vacuum Science & Technology B, 23(4), 1379, 2005 |
| 3 |
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin R, Smorchkova I, Heying B Journal of Vacuum Science & Technology B, 23(4), 1562, 2005 |
| 4 |
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS Journal of Vacuum Science & Technology B, 22(3), 1145, 2004 |
| 5 |
Analysis of interface electronic structure in ln(x)Ga(1-x)N/GaN heterostructures Zhang H, Miller EJ, Yu ET, Poblenz C, Speck JS Journal of Vacuum Science & Technology B, 22(4), 2169, 2004 |
| 6 |
The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy Haus E, Smorchkova IP, Heying B, Fini P, Poblenz C, Mates T, Mishra UK, Speck JS Journal of Crystal Growth, 246(1-2), 55, 2002 |
| 7 |
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Elsass CR, Poblenz C, Heying B, Fini P, Petroff PM, DenBaars SP, Mishra UK, Speck JS Journal of Crystal Growth, 233(4), 709, 2001 |