검색결과 : 60건
| No. | Article |
|---|---|
| 1 |
Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light-Emitting Diodes by Ag and Ag/SiO2 Nanoparticles Jang LW, Jeon DW, Kim M, Jeon JW, Polyakov AY, Ju JW, Lee SJ, Baek JH, Yang JK, Lee IH Advanced Functional Materials, 22(13), 2728, 2012 |
| 2 |
Photoluminescence Enhancement in GaN/InGaN Multi-Quantum Well Structures as a Function of Quantum Well Numbers: Coupling Behaviors of Localized Surface Plasmon Jang LW, Jeon DW, Jeon JW, Kim M, Kim MK, Polyakov AY, Ju JW, Lee SJ, Baek JH, Jeong MS, Kim YH, Lee IH Journal of the Electrochemical Society, 159(5), H522, 2012 |
| 3 |
Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films Lee IH, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Korulin AV, Pearton SJ Journal of the Electrochemical Society, 158(9), H866, 2011 |
| 4 |
Neutron transmutation doping effects in GaN Polyakov AY, Smirnov NB, Govorkov AV, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Pearton SJ Journal of Vacuum Science & Technology B, 28(3), 608, 2010 |
| 5 |
GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Polyakov AY, Markov AV, Duhnovsky MP, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Belogorokhov AI, Belogorokhov IA, Ratnikova AK, Fyodorov YY, Kudryashov OY, Leontyev IA, Ratushnyi VI, Pearton SJ Journal of Vacuum Science & Technology B, 28(5), 1011, 2010 |
| 6 |
a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee IH, Han J, Sun Q, Pearton SJ Journal of Vacuum Science & Technology B, 28(5), 1039, 2010 |
| 7 |
Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Polyakov AY, Smirnov NB, Govorkov AN, Markov AN, Yakimov EB, Vergeles PS, Amano H, Kawashima T Journal of Crystal Growth, 311(10), 2923, 2009 |
| 8 |
Electron irradiation effects in GaN/InGaN multiple quantum well structures Polyakov AY, Smirnov NB, Govorkov AV, Lee IH, Baek JH, Kolin NG, Boiko VM, Merkurisov DI, Pearton SJ Journal of the Electrochemical Society, 155(1), H31, 2008 |
| 9 |
Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Lee IH, Lee CR, Pearton SJ Journal of Vacuum Science & Technology B, 26(3), 990, 2008 |
| 10 |
Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy Donskov AA, D'yakonov LI, Govorkov AV, Kozlova YP, Malakhov SS, Markov AV, Mezhennyi MV, Pavlov VF, Polyakov AY, Smirnov NB, Yugova TG, Pearton SJ Journal of Vacuum Science & Technology B, 26(6), 1937, 2008 |