| 1 |
Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride
Choi HY, Wong H, Filip V, Sen B, Kok CW, Chan M, Poon MC
Thin Solid Films, 504(1-2), 7, 2006 |
| 2 |
Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric
Wong H, Sen B, Filip V, Poon MC
Thin Solid Films, 504(1-2), 192, 2006 |
| 3 |
Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure
Sen B, Wong H, Filip V, Choi HY, Sarkar CK, Chan M, Kok CW, Poon MC
Thin Solid Films, 504(1-2), 312, 2006 |
| 4 |
Interface bonding structure of hafniurn oxide prepared by direct sputtering of hafnium in oxygen
Wong H, Ng KL, Zhan N, Poon MC, Kok CW
Journal of Vacuum Science & Technology B, 22(3), 1092, 2004 |
| 5 |
Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitride
Poon MC, Kok CW, Wong H, Chan PJ
Thin Solid Films, 462-63, 42, 2004 |
| 6 |
Interface and oxide traps in high-kappa hafnium oxide films
Wong H, Zhan N, Ng KL, Poon MC, Kok CW
Thin Solid Films, 462-63, 96, 2004 |
| 7 |
XPS study of the thermal instability of HfO2 prepared by Hf sputtering in oxygen with RTA
Zhan N, Poon MC, Kok CW, Ng KL, Wong H
Journal of the Electrochemical Society, 150(10), F200, 2003 |
| 8 |
Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing
Qin M, Poon MC, Fan LJ, Chan M, Yuen CY, Chan WY
Thin Solid Films, 406(1-2), 17, 2002 |
| 9 |
Preparation of thin dielectric film for nonvolatile memory by thermal oxidation of Si-rich LPCVD nitride
Wong H, Poon MC, Gao Y, Kok TCW
Journal of the Electrochemical Society, 148(5), G275, 2001 |
| 10 |
Resistivity and thermal stability of nickel mono-silicide
Poon MC, Deng F, Chan M, Chan WY, Lau SS
Applied Surface Science, 157(1-2), 29, 2000 |
