화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy
Darnon M, Chevolleau T, David T, Ducote J, Posseme N, Bouyssou R, Bailly F, Perret D, Joubert O
Journal of Vacuum Science & Technology B, 28(1), 149, 2010
2 Scatterometric porosimetry: A new characterization technique for porous material patterned structures
Bouyssou R, El Kodadi M, Licitra C, Chevolleau T, Besacier M, Posseme N, Joubert O, Schiavone P
Journal of Vacuum Science & Technology B, 28(4), L31, 2010
3 Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms
Posseme N, Chevolleau T, Bouyssou R, David T, Arnal V, Barnes JP, Verove C, Joubert O
Journal of Vacuum Science & Technology B, 28(4), 809, 2010
4 Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials
Darnon M, Chevolleau T, David T, Posseme N, Ducote J, Licitra C, Vallier L, Joubert O, Torres J
Journal of Vacuum Science & Technology B, 26(6), 1964, 2008
5 Analyses of chamber wall coatings during the patterning of ultralow-k materials with a metal hard mask: Consequences on cleaning strategies
Chevolleau T, Darnon M, David T, Posseme N, Torres J, Joubert O
Journal of Vacuum Science & Technology B, 25(3), 886, 2007
6 Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
Posseme N, Chevolleau T, David T, Darnon M, Louveau O, Joubert O
Journal of Vacuum Science & Technology B, 25(6), 1928, 2007
7 A novel low-damage methane-based plasma ash chemistry (CH4/Ar): Limiting metal barrier diffusion into porous low-kappa materials
Posseme N, David T, Chevolleau T, Joubert O
Electrochemical and Solid State Letters, 8(5), G112, 2005
8 Resist-pattern transformation studied by x-ray photoelectron spectroscopy after exposure to reactive plasmas. I. Methodology and examples
Pargon E, Joubert O, Posseme N, Vallier L
Journal of Vacuum Science & Technology B, 22(4), 1858, 2004
9 Etching of porous SiOCH materials in fluorocarbon-based plasmas
Posseme N, Chevolleau T, Joubert O, Vallier L, Rochat N
Journal of Vacuum Science & Technology B, 22(6), 2772, 2004
10 Etching mechanisms of low-k SIOCH and selectivity to SiCH and SiO2 in fluorocarbon based plasmas
Posseme N, Chevolleau T, Joubert O, Vallier L
Journal of Vacuum Science & Technology B, 21(6), 2432, 2003