화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation
Prasad YN, Kwon TY, Kim IK, Kim IG, Park JG
Journal of the Electrochemical Society, 158(4), H394, 2011
2 Citric Acid and NaIO4 Based Alkaline Cleaning Solution for Particle Removal during Post-Ru CMP Cleaning
Kim IK, Prasad YN, Kwon TY, Kim HM, Busnaina AA, Park JG
Journal of the Electrochemical Society, 158(10), H1052, 2011
3 Synthesis of Fe metal precipitated colloidal silica and its application to W chemical mechanical polishing (CMP) slurry
Kang YJ, Prasad YN, Kim IK, Jung SJ, Park JG
Journal of Colloid and Interface Science, 349(1), 402, 2010
4 Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization
Choi JG, Prasad YN, Kim IK, Kim IG, Kim WJ, Busnaina AA, Park JG
Journal of the Electrochemical Society, 157(2), H186, 2010
5 The Synergetic Role of Pores and Grooves of the Pad on the Scratch Formation during STI CMP
Choi JG, Prasad YN, Kim IK, Kim WJ, Park JG
Journal of the Electrochemical Society, 157(8), H806, 2010
6 Effect of Polysilicon Wettability on Polishing and Organic Defects during CMP
Park JG, Prasad YN, Kang YJ, Kim IK, Hong YK, Han SY, Yun SK, Yoon BU, Busnaina AA
Journal of the Electrochemical Society, 156(11), H869, 2009
7 Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor
Prasad YN, Ramanathan S
Electrochimica Acta, 52(22), 6353, 2007
8 Role of amino-acid adsorption on silica and silicon nitride surfaces during STI CMP
Prasad YN, Ramanathan S
Electrochemical and Solid State Letters, 9(12), G337, 2006