화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
Wu M, Leach JH, Ni X, Li X, Xie J, Dogan S, Ozgur U, Morkoc H, Paskova T, Preble E, Evans KR, Lu CZ
Journal of Vacuum Science & Technology B, 28(5), 908, 2010
2 Surface preparation of substrates from bulk GaN crystals
Hanser D, Tutor M, Preble E, Williams M, Xu XP, Tsvetkov D, Liu LH
Journal of Crystal Growth, 305(2), 372, 2007
3 Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
McGinnis AJ, Thomson D, Banks A, Preble E, Davis RF, Lamb HH
Journal of Vacuum Science & Technology A, 21(1), 294, 2003
4 Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF
Journal of Crystal Growth, 236(4), 529, 2002
5 Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M
Journal of Crystal Growth, 231(3), 335, 2001