검색결과 : 5건
No. | Article |
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1 |
InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Wu M, Leach JH, Ni X, Li X, Xie J, Dogan S, Ozgur U, Morkoc H, Paskova T, Preble E, Evans KR, Lu CZ Journal of Vacuum Science & Technology B, 28(5), 908, 2010 |
2 |
Surface preparation of substrates from bulk GaN crystals Hanser D, Tutor M, Preble E, Williams M, Xu XP, Tsvetkov D, Liu LH Journal of Crystal Growth, 305(2), 372, 2007 |
3 |
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia McGinnis AJ, Thomson D, Banks A, Preble E, Davis RF, Lamb HH Journal of Vacuum Science & Technology A, 21(1), 294, 2003 |
4 |
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF Journal of Crystal Growth, 236(4), 529, 2002 |
5 |
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M Journal of Crystal Growth, 231(3), 335, 2001 |