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| No. | Article |
|---|---|
| 1 |
Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111) Nikishin S, Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, de Peralta LG, Zubrilov A, Tretyakov V, Copeland K, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H Journal of Vacuum Science & Technology B, 19(4), 1409, 2001 |