검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
AlGaN HEMTs on patterned resistive/conductive SiC templates Prystawko P, Sarzynski M, Nowakowska-Siwinska A, Crippa D, Kruszewski P, Wojtasiak W, Leszczynski M Journal of Crystal Growth, 464, 159, 2017 |
| 2 |
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 414, 38, 2015 |
| 3 |
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T Journal of Crystal Growth, 318(1), 496, 2011 |
| 4 |
Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S Journal of Vacuum Science & Technology B, 24(3), 1505, 2006 |
| 5 |
Properties of InGaN blue laser diodes grown on bulk GaN substrates Perlin P, Suski T, Leszczynski M, Prystawko P, Swietlik T, Marona L, Wisniewski P, Czernecki R, Nowak G, Weyher JL, Kamler G, Borysiuk J, Litwin-Staszewska E, Dmowski L, Piotrzkowski R, Franssen G, Grzanka S, Grzegory I, Porowski S Journal of Crystal Growth, 281(1), 107, 2005 |
| 6 |
Diffusion length of carriers and excitons in GaN-influence of epilayer microstructure Godlewski M, Lusakowska E, Goldys EM, Phillips MR, Bottcher T, Figge S, Hommel D, Prystawko P, Leszcynski M, Grzegory I, Porowski S Applied Surface Science, 223(4), 294, 2004 |
| 7 |
High-power laser structures grown on bulk GaN crystals Prystawko P, Czernetzki R, Gorczyca L, Targowski G, Wisniewski P, Perlin P, Zielinski M, Suski T, Leszczynski M, Grzegory I, Porowski S Journal of Crystal Growth, 272(1-4), 274, 2004 |
| 8 |
X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates Domagala JZ, Zytkiewicz ZR, Beaumont B, Kozlowski J, Czernetzki R, Prystawko P, Leszczynski M Journal of Crystal Growth, 245(1-2), 37, 2002 |
| 9 |
III-N ternary epi-layers grown on the GaN bulk crystals Leszczynski M, Prystawko P, Czernecki R, Lehnert J, Suski T, Perlin P, Wisniewski P, Grzegory I, Nowak G, Porowski S, Albrecht M Journal of Crystal Growth, 231(3), 352, 2001 |
| 10 |
Infrared studies on GaN single crystals and homoepitaxial layers Frayssinet E, Knap W, Prystawko P, Leszczynski M, Grzegory I, Suski T, Beaumont B, Gibart P Journal of Crystal Growth, 218(2-4), 161, 2000 |