검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs Zagni N, Puglisi FM, Pavan P, Verzellesi G Solid-State Electronics, 159, 135, 2019 |
| 2 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory Puglisi FM, Larcher L, Padovani A, Pavan P Solid-State Electronics, 125, 204, 2016 |
| 3 |
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi FM, Pavan P, Larcher L, Padovani A Solid-State Electronics, 113, 132, 2015 |
| 4 |
A study on HfO2 RRAM in HRS based on I-V and RTN analysis Puglisi FM, Pavan P, Padovani A, Larcher L Solid-State Electronics, 102, 69, 2014 |
| 5 |
RTS noise characterization of HfOx RRAM in high resistive state Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G Solid-State Electronics, 84, 160, 2013 |