검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Structural comparison of gadolinium and lanthanum silicate films on Si(100) by HRTEM, EELS and SAED Wu X, Landheer D, Quance T, Graham MJ, Botton GA Applied Surface Science, 200(1-4), 15, 2002 |
| 2 |
Characterization of gadolinium and lanthanum oxide films on Si (100) Wu X, Landheer D, Sproule GI, Quance T, Graham MJ, Botton GA Journal of Vacuum Science & Technology A, 20(3), 1141, 2002 |
| 3 |
Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N-2 Landheer D, Rajesh K, Hulse JE, Sproule GI, McCaffrey J, Quance T, Graham MJ Journal of the Electrochemical Society, 147(2), 731, 2000 |
| 4 |
Back-surface passivation of polycrystalline CdSe thin-film transistors Landheer D, Masson DP, Belkouch S, Das SR, Quance T, LeBrun L, Hulse JE Journal of Vacuum Science & Technology A, 16(2), 834, 1998 |
| 5 |
Effects of initial annealing treatments on the electrical characteristics and stability of unpassivated CdSe thin film transistors Belkouch S, Landheer D, Masson DP, Das SR, Quance T, LeBrun L, Rolfe SJ Journal of Vacuum Science & Technology A, 16(2), 860, 1998 |
| 6 |
Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition Landheer D, Rajesh K, Masson D, Hulse JE, Sproule GI, Quance T Journal of Vacuum Science & Technology A, 16(5), 2931, 1998 |
| 7 |
Formation of High-Quality Silicon Dioxide Films by Electron-Cyclotron-Resonance Plasma Oxidation and Plasma-Enhanced Chemical-Vapor-Deposition Landheer D, Hulse JE, Quance T Thin Solid Films, 293(1-2), 52, 1997 |
| 8 |
Formation of High-Quality Nitrided Silicon Dioxide Films Using Electron-Cyclotron-Resonance Chemical-Vapor-Deposition with Nitrous-Oxide and Silane Landheer D, Tao Y, Hulse JE, Quance T, Xu DX Journal of the Electrochemical Society, 143(5), 1681, 1996 |