화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 MBE growth and doping of AlGaP
Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C
Journal of Crystal Growth, 466, 6, 2017
2 Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN
Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C
Journal of Crystal Growth, 377, 17, 2013
3 Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster
Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C
Journal of Crystal Growth, 380, 157, 2013
4 Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A
Thin Solid Films, 541, 36, 2013