검색결과 : 42건
| No. | Article |
|---|---|
| 1 |
On the origin of reflectance-anisotropy oscillations during GaAs (001) homoepitaxy Ortega-Gallegos J, Guevara-Macias LE, Ariza-Flores AD, Castro-Garcia R, Lastras-Martinez LF, Balderas-Navarro RE, Lopez-Estopier RE, Lastras-Martinez A Applied Surface Science, 439, 963, 2018 |
| 2 |
Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K Applied Surface Science, 458, 512, 2018 |
| 3 |
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T Journal of Crystal Growth, 464, 14, 2017 |
| 4 |
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M Applied Surface Science, 328, 120, 2015 |
| 5 |
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M Applied Surface Science, 357, 530, 2015 |
| 6 |
Lithological dependency and anisotropy of vitrinite reflectance in high rank sedimentary rocks of the Ibbenburen area, NW-Germany: Implications for the tectonic and thermal evolution of the Lower Saxony Basin Bruns B, Littke R International Journal of Coal Geology, 137, 124, 2015 |
| 7 |
Optical in situ calibration of Sb for growing disordered GaInP by MOVPE Barrigon E, Barrutia L, Rey-Stolle I Journal of Crystal Growth, 426, 71, 2015 |
| 8 |
Stable Alignment of Tautomers at Room Temperature in Porphyrin 2D Layers Bussetti G, Campione M, Riva M, Picone A, Raimondo L, Ferraro L, Hogan C, Palummo M, Brambilla A, Finazzi M, Duo L, Sassella A, Ciccacci F Advanced Functional Materials, 24(7), 958, 2014 |
| 9 |
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots Hospodkova A, Pangrac J, Zikova M, Oswald J, Vyskocil J, Komninou P, Kioseoglou J, Florini N, Hulicius E Applied Surface Science, 301, 173, 2014 |
| 10 |
Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K Journal of Crystal Growth, 315(1), 16, 2011 |