화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization
Hong WE, Ro JS
Solid-State Electronics, 103, 178, 2015
2 Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films
Hong WE, Ro JS
Thin Solid Films, 519(7), 2371, 2011
3 In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process
Kim DH, Hong WE, Ro JS, Lee SH, Lee CH, Park S
Thin Solid Films, 519(16), 5516, 2011
4 Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification
Hong WE, Kim DH, Kim CW, Ro JS
Thin Solid Films, 520(1), 616, 2011
5 Reverse annealing of boron doped polycrystalline silicon
Jin BJ, Hong WE, Kim DH, Uemoto T, Kim CW, Ro JS
Thin Solid Films, 516(18), 6321, 2008
6 Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer
Hong WE, Ro JS
Thin Solid Films, 515(13), 5357, 2007
7 Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs
Kim DM, Kim DS, Ro JS
Thin Solid Films, 475(1-2), 342, 2005
8 초 저 에너지 이온주입으로 고 조사량 B 이온 주입된 실리콘의 Deactivation 현상
유승한, 노재상
Korean Journal of Materials Research, 13(6), 398, 2003
9 A study of buried layer formation using MeV ion implantation for the fabrication of ULSI CMOS devices
Ro JS
Thin Solid Films, 349(1-2), 130, 1999
10 VISCOELASTIC FREE-SURFACE FLOWS - THIN-FILM HYDRODYNAMICS OF HELE-SHAW AND DIP COATING FLOWS
RO JS, HOMSY GM
Journal of Non-Newtonian Fluid Mechanics, 57(2-3), 203, 1995