1 |
Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization Hong WE, Ro JS Solid-State Electronics, 103, 178, 2015 |
2 |
Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films Hong WE, Ro JS Thin Solid Films, 519(7), 2371, 2011 |
3 |
In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process Kim DH, Hong WE, Ro JS, Lee SH, Lee CH, Park S Thin Solid Films, 519(16), 5516, 2011 |
4 |
Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification Hong WE, Kim DH, Kim CW, Ro JS Thin Solid Films, 520(1), 616, 2011 |
5 |
Reverse annealing of boron doped polycrystalline silicon Jin BJ, Hong WE, Kim DH, Uemoto T, Kim CW, Ro JS Thin Solid Films, 516(18), 6321, 2008 |
6 |
Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer Hong WE, Ro JS Thin Solid Films, 515(13), 5357, 2007 |
7 |
Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs Kim DM, Kim DS, Ro JS Thin Solid Films, 475(1-2), 342, 2005 |
8 |
초 저 에너지 이온주입으로 고 조사량 B 이온 주입된 실리콘의 Deactivation 현상 유승한, 노재상 Korean Journal of Materials Research, 13(6), 398, 2003 |
9 |
A study of buried layer formation using MeV ion implantation for the fabrication of ULSI CMOS devices Ro JS Thin Solid Films, 349(1-2), 130, 1999 |
10 |
VISCOELASTIC FREE-SURFACE FLOWS - THIN-FILM HYDRODYNAMICS OF HELE-SHAW AND DIP COATING FLOWS RO JS, HOMSY GM Journal of Non-Newtonian Fluid Mechanics, 57(2-3), 203, 1995 |