검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models Diaz-Fortuny J, Martin-Martinez J, Rodriguez R, Castro-Lopez R, Roca E, Fernandez FV, Nafria M Solid-State Electronics, 159, 99, 2019 |
| 2 |
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation Kao TH, Chang SJ, Fang YK, Huang PC, Wang BC, Wu CY, Wu SL Solid-State Electronics, 115, 7, 2016 |
| 3 |
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 117, 88, 2016 |
| 4 |
The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits Kaczer B, Franco J, Weckx P, Roussel PJ, Simicic M, Putcha V, Bury E, Cho M, Degraeve R, Linten D, Groeseneken G, Debacker P, Parvais B, Raghavan P, Catthoor F, Rzepa G, Waltl M, Goes W, Grasser T Solid-State Electronics, 125, 52, 2016 |
| 5 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory Puglisi FM, Larcher L, Padovani A, Pavan P Solid-State Electronics, 125, 204, 2016 |
| 6 |
Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage Yoo SW, Shin J, Seo Y, Kim H, Jeon S, Kim H, Shin H Solid-State Electronics, 109, 42, 2015 |
| 7 |
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi FM, Pavan P, Larcher L, Padovani A Solid-State Electronics, 113, 132, 2015 |
| 8 |
Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET Gia QN, Yoo SW, Lee H, Shin H Solid-State Electronics, 92, 20, 2014 |
| 9 |
A study on HfO2 RRAM in HRS based on I-V and RTN analysis Puglisi FM, Pavan P, Padovani A, Larcher L Solid-State Electronics, 102, 69, 2014 |
| 10 |
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study Amoroso SM, Gerrer L, Markov S, Adamu-Lema F, Asenov A Solid-State Electronics, 84, 120, 2013 |