검색결과 : 8건
No. | Article |
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1 |
Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts Mikolasek M, Frohlich K, Husekova K, Racko J, Rehacek V, Chymo F, Tapajna M, Harmatha L Applied Surface Science, 461, 48, 2018 |
2 |
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J Applied Surface Science, 395, 122, 2017 |
3 |
Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells Mikolasek M, Racko J, Harmatha L Applied Surface Science, 395, 166, 2017 |
4 |
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times Racko J, Benko P, Hotovy I, Harmatha L, Mikolasek M, Granzner R, Kittler M, Schwierz F, Breza J Applied Surface Science, 312, 68, 2014 |
5 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J Applied Surface Science, 312, 102, 2014 |
6 |
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer Mikolasek M, Stuchlikova L, Harmatha L, Vincze A, Nemec M, Racko J, Breza J Applied Surface Science, 312, 152, 2014 |
7 |
Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells Mikolasek M, Racko J, Harmatha L, Gaspierik P, Sutta P Applied Surface Science, 256(18), 5662, 2010 |
8 |
Unified tunnelling-diffusion theory for Schottky and very thin MOS structures Racko J, Valent P, Benko P, Donoval D, Harmatha L, Pintes P, Breza J Solid-State Electronics, 52(11), 1755, 2008 |