화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts
Mikolasek M, Frohlich K, Husekova K, Racko J, Rehacek V, Chymo F, Tapajna M, Harmatha L
Applied Surface Science, 461, 48, 2018
2 Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling
Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J
Applied Surface Science, 395, 122, 2017
3 Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells
Mikolasek M, Racko J, Harmatha L
Applied Surface Science, 395, 166, 2017
4 A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
Racko J, Benko P, Hotovy I, Harmatha L, Mikolasek M, Granzner R, Kittler M, Schwierz F, Breza J
Applied Surface Science, 312, 68, 2014
5 Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J
Applied Surface Science, 312, 102, 2014
6 Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Mikolasek M, Stuchlikova L, Harmatha L, Vincze A, Nemec M, Racko J, Breza J
Applied Surface Science, 312, 152, 2014
7 Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells
Mikolasek M, Racko J, Harmatha L, Gaspierik P, Sutta P
Applied Surface Science, 256(18), 5662, 2010
8 Unified tunnelling-diffusion theory for Schottky and very thin MOS structures
Racko J, Valent P, Benko P, Donoval D, Harmatha L, Pintes P, Breza J
Solid-State Electronics, 52(11), 1755, 2008