| 1 |
Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region (vol 396, pg 1472, 2017)
Nguyen CPT, Raja J, Kim S, Jang K, Le AHT, Lee YJ, Yi J
Applied Surface Science, 469, 1016, 2019 |
| 2 |
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells
Balaji N, Nguyen HTT, Park C, Ju M, Raja J, Chatterjee S, Jeyakumar R, Yi J
Current Applied Physics, 18(1), 107, 2018 |
| 3 |
Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region
Nguyen CPT, Raja J, Kim S, Jang K, Le AHT, Lee YJ, Yi J
Applied Surface Science, 396, 1472, 2017 |
| 4 |
Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel
Raja J, Jang K, Nguyen HH, Trinh TT, Choi W, Yi J
Current Applied Physics, 13(1), 246, 2013 |
| 5 |
Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels
Nguyen HH, Nguyen VD, Trinh TT, Jang K, Baek K, Raja J, Yi J
Journal of the Electrochemical Society, 158(10), H1077, 2011 |
