화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Ramvall P, Wang CH, Astromskas G, Vellianitis G, Holland M, Droopad R, Samuelson L, Wernersson LE, Passlack M, Diaz CH
Journal of Crystal Growth, 374, 43, 2013
2 Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
Shen XQ, Ramvall P, Riblet P, Aoyagi Y, Hosi K, Tanaka S, Suemune I
Journal of Crystal Growth, 209(2-3), 396, 2000