| 1 |
Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
Lim N, Efremov A, Hwang HG, Nahm S, Kwon KH
Plasma Chemistry and Plasma Processing, 40(2), 625, 2020 |
| 2 |
Peculiarities of Si and SiO2 Etching Kinetics in HBr+Cl-2+O-2 Inductively Coupled Plasma
Lee BJ, Efremov A, Kim J, Kim C, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 339, 2019 |
| 3 |
Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O-2 Inductively Coupled Plasma
Lee J, Kim J, Efremov A, Kim C, Lee HW, Kwon KH
Plasma Chemistry and Plasma Processing, 39(4), 1127, 2019 |
| 4 |
Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
Lim N, Efremov A, Kwon KH
Thin Solid Films, 685, 97, 2019 |
| 5 |
Reaction of ethanol over hydroxyapatite affected by Ca/P ratio of catalyst
Tsuchida T, Kubo J, Yoshioka T, Sakuma S, Takeguchi T, Ueda W
Journal of Catalysis, 259(2), 183, 2008 |
| 6 |
A study of the heterogeneous reaction between dinitrogen pentaoxide and chloride ions on low-temperature thin films
Sodeau JR, Roddis TB, Gane MP
Journal of Physical Chemistry A, 104(9), 1890, 2000 |
| 7 |
Accurate reaction rate calculations including internal and rotational motion: A statistical multi-configurational time-dependent Hartree approach
Matzkies F, Manthe U
Journal of Chemical Physics, 110(1), 88, 1999 |
| 8 |
Application of a general classical variational theory to the F+H-2 -> FH+1H reaction
Rutenburg I, Koeppl GW
Journal of Chemical Physics, 110(8), 3842, 1999 |
| 9 |
Fully converged integral cross sections of diatom-diatom reactions and the accuracy of the centrifugal sudden approximation in the H-2+OH reaction
Zhang DH, Lee SY
Journal of Chemical Physics, 110(9), 4435, 1999 |
| 10 |
Accurate quantum calculations of thermal rate constants employing MCTDH : H-2+OH -> H+H2O and D-2+OH -> D+DOH
Matzkies F, Manthe U
Journal of Chemical Physics, 108(12), 4828, 1998 |
