검색결과 : 1건
No. | Article |
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1 |
Pathway to depositing device-quality 50 degrees C silicon nitride in a high-density plasma system Farber DG, Bae S, Okandan M, Reber DM, Kuzma T, Fonash SJ Journal of the Electrochemical Society, 146(6), 2254, 1999 |
No. | Article |
---|---|
1 |
Pathway to depositing device-quality 50 degrees C silicon nitride in a high-density plasma system Farber DG, Bae S, Okandan M, Reber DM, Kuzma T, Fonash SJ Journal of the Electrochemical Society, 146(6), 2254, 1999 |