화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The effects of Co/N dopants on the electronic, redox potential, optical, and photocatalytic water-splitting properties of TiO2: First principles calculations
Zhao YF, Wang W, He L
Chemical Physics Letters, 685, 108, 2017
2 A recombination center in p-type GaAsN grown by chemical beam epitaxy
Bouzazi B, Suzuki H, Kojima N, Ohshita Y, Yamaguchi M
Solar Energy Materials and Solar Cells, 95(1), 281, 2011
3 Neutral dangling bonds may not be the dominant recombination centers for photoconductivity in hot-wire a-Si : H
Han DX, Yue GZ, Wang Q, Shimizu T
Thin Solid Films, 430(1-2), 141, 2003
4 Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS
Ishii H, Shinagawa T, Tanaka S, Okumura T
Journal of Crystal Growth, 210(1-3), 242, 2000