검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Effect of the AIN nucleation layer growth on AlN material quality Reentila O, Brunner F, Knauer A, Mogilatenko A, Neumann W, Protzmann H, Heuken M, Kneissl M, Weyers M, Traaenkle G Journal of Crystal Growth, 310(23), 4932, 2008 |
| 2 |
Comparison of H-2 and N-2 as carrier gas in MOVPE growth of InGaAsN quantum wells Reentila O, Mattila M, Knuuttila L, Hakkarainen T, Soparlen M, Lipsanen H Journal of Crystal Growth, 298, 536, 2007 |
| 3 |
Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth Reentila O, Mattila M, Sopanen M, Lipsanen H Journal of Crystal Growth, 290(2), 345, 2006 |