검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K Applied Surface Science, 458, 512, 2018 |
| 2 |
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T Journal of Crystal Growth, 464, 14, 2017 |
| 3 |
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M Applied Surface Science, 328, 120, 2015 |
| 4 |
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M Applied Surface Science, 357, 530, 2015 |
| 5 |
Optical in situ calibration of Sb for growing disordered GaInP by MOVPE Barrigon E, Barrutia L, Rey-Stolle I Journal of Crystal Growth, 426, 71, 2015 |
| 6 |
Stable Alignment of Tautomers at Room Temperature in Porphyrin 2D Layers Bussetti G, Campione M, Riva M, Picone A, Raimondo L, Ferraro L, Hogan C, Palummo M, Brambilla A, Finazzi M, Duo L, Sassella A, Ciccacci F Advanced Functional Materials, 24(7), 958, 2014 |
| 7 |
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots Hospodkova A, Pangrac J, Zikova M, Oswald J, Vyskocil J, Komninou P, Kioseoglou J, Florini N, Hulicius E Applied Surface Science, 301, 173, 2014 |
| 8 |
Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K Journal of Crystal Growth, 315(1), 16, 2011 |
| 9 |
Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (100) Barrigon E, Galiana B, Rey-Stolle I Journal of Crystal Growth, 315(1), 22, 2011 |
| 10 |
GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient Doscher H, Moller K, Hannappel T Journal of Crystal Growth, 318(1), 372, 2011 |