화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors
Millithaler JF, Pousset J, Reggiani L, Marinchio H, Varani L, Palermo C, Ziade P, Mateos J, Gonzalez T, Perez S
Solid-State Electronics, 56(1), 116, 2011
2 Giant suppression of avalanche noise in GaN double-drift impact diodes
Reklaitis A, Reggiani L
Solid-State Electronics, 49(3), 405, 2005
3 Comparative study of Terahertz generation in wide band gap bulk semiconductors
Starikov E, Shiktorov P, Gruzinskis V, Reggiani L, Varani L, Vaissiere JC, Zhao H
Materials Science Forum, 384-3, 205, 2002