화학공학소재연구정보센터
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No. Article
1 Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module
Kudla C, Blumenau AT, Bullesfeld F, Dropka N, Frank-Rotsch C, Kiessling F, Klein O, Lange P, Miller W, Rehse U, Sahr U, Schellhorn M, Weidemann G, Ziem M, Bethin G, Fornari R, Muller M, Sprekels J, Trautmann V, Rudolph P
Journal of Crystal Growth, 365, 54, 2013
2 Numerical study on improved mixing in silicon melts by double-frequency TMF
Dropka N, Miller W, Rehse U, Rudolph P, Bullesfeld F, Sahr U, Klein O, Reinhardt D
Journal of Crystal Growth, 318(1), 275, 2011
3 Homogeneous TMF melt-solution mixing during dipping LPE of (Hg,Cd)Te layers
Bitterlich H, Frank-Rotsch C, Miller W, Rehse U, Rudolph P
Journal of Crystal Growth, 318(1), 1034, 2011
4 Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fields
Dropka N, Miller W, Menzel R, Rehse U
Journal of Crystal Growth, 312(8), 1407, 2010
5 Numerical simulation of Czochralski crystal growth under the influence of a traveling magnetic field generated by an internal heater-magnet module (HMM)
Klein O, Lechner C, Druet PE, Philip P, Sprekels J, Frank-Rotsch C, Kiessling FM, Miller W, Rehse U, Rudolph P
Journal of Crystal Growth, 310(7-9), 1523, 2008
6 Axisymmetric and 3D calculations of melt flow during VCz growth
Bansch E, Davis D, Langmach H, Miller W, Rehse U, Reinhardt G, Uhle M
Journal of Crystal Growth, 266(1-3), 60, 2004
7 A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface
Rehse U, Miller W, Frank C, Rudolph P, Neubert M
Journal of Crystal Growth, 230(1-2), 143, 2001
8 Influence of melt convection on the interface during Czochralski crystal growth
Miller W, Rehse U, Bottcher K
Solid-State Electronics, 44(5), 825, 2000